| PART |
Description |
Maker |
| 2SC3355 2SC3355-T |
For amplify low noise and high frequency
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
NEC[NEC]
|
| 310-025109-021 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-024105-021 024105-021 |
Filtered Low Noise Ampli er
|
API Technologies Corp
Spectrum Microwave, Inc.
|
| 310-025109-022 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-025105-022 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| FH102 1282 |
High-Frequency Low-Noise Amp/ Differential Amp Applications
NPN Epitaxial Planar Silicon Composite Transistor
From old datasheet system
High-Frequency Low-Noise Amp, Differential Amp Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| 2SC5433 2SC5433-T1 |
Reduced noise high frequency amplification transistor
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
|
NEC[NEC]
|
| MRF917T1 |
LOW NOISE HIGH FREQUENCY TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| 2SC3356 |
HIGH FREQUENCY LOW NOISE AMPLIFIER
|
UTC
|
| 2SC5474 |
Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation)
|
Panasonic
|
